生物通

二维场效应晶体管单层MoS2的单片三维集成技术推动静态随机存取存储 ...

为解决SRAM（静态随机存取存储器）在先进技术节点下微缩化的瓶颈问题，研究人员通过单片三维（3D）集成二维（2D）材料场效应晶体管（FETs），成功实现了基于单层MoS2的3D-SRAM单元设计。该研究展示了两层堆叠结构使SRAM单元面积减少40%，并预测三层堆叠可 ...
Design-Reuse

Low Power 7T SRAM Cell Scheme - ''Saving Write Zero Power''

This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...
Electronic Design

10T SRAM Circuitry Clocks at 3.1 GHz

This file type includes high resolution graphics and schematics when applicable. Memory plays a continually more important role in digital and mixed-signal circuits, but a key for future designs is ...
Semiconductor Engineering

Overcoming Challenges In Next-Generation SRAM Cell Architectures

Static Random-Access Memory (SRAM) has been a key element for logic circuitry since the early age of the semiconductor industry. The SRAM cell usually consists of six transistors connected to each ...
Hexus

IBM Builds World's Smallest SRAM Memory Cell

YORKTOWN HEIGHTS, NY - 18 Aug 2008: IBM (NYSE: IBM) and its joint development partners -- AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) -- ...