Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...

Austin, Feb. 16, 2026 (GLOBE NEWSWIRE) -- Power Transistor Market Size & Growth Insights: According to the SNS Insider, “The Power Transistor Market Size was valued at USD 16.26 Billion in 2025 and is ...

Power Transistor Market · GlobeNewswire Inc. Dublin, Jan. 29, 2026 (GLOBE NEWSWIRE) -- The "Power Transistor Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report ...

Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

BEIJING, Feb. 16 (Xinhua) -- A team of Chinese researchers has developed the world's smallest ferroelectric transistor with ultralow power consumption, offering new insights into progress in the ...

A team of Chinese researchers has developed the world's smallest ferroelectric transistor with ultralow power consumption, offering new insights into progress in the semiconductor industry, according ...

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...

Tiny electronic devices, called microelectronics, may one day be printed as easily as words on a page, thanks to new research from scientists at the U.S. Department of Energy's (DOE) Argonne National ...

The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...