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EDN电子技术设计
1 年
MOSFET器件的高压CV测试详解
MOSFET、IGBT和BJT等半导体器件的开关速度受到元件本身电容的影响。本应用程序说明了如何使用4200A-CVIV能够在不需要重新连接任何电缆的情况下,在200V直流偏置的情况下进行这些测量,从而减少了用户错误并允许自动测试··· MOSFET、IGBT和BJT等半导体器件的 ...
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