Northrop Grumman researchers have produced and demonstrated a transistor that has a maximum frequency of operation of more than 1,000 GHz. The device is an indium phosphide-based High Electronic ...

LONDON—Startup SuVolta Inc has announced that its novel transistor technology, dubbed PowerShrink, operates down to 0.425-V, approximately 300-mV below conventional processes. PowerShrink is based on ...

Researchers from IBM (East Fishkill, NY) and Georgia Institute of Technology (Atlanta, GA) recently announced an SiGe transistor operating above 500 GHz claimed 250 times faster than the average ...

A 28-V, 5-W class high electron mobility transistor (HEMT) from Nitronex now operates at frequencies that fall between 5.1 GHz to 5.2 GHz and 5.7 GHz to 5.8 GHz. The NPTB00004 gallium nitride on ...

For nearly two decades, two‑dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy‑efficient ...

Lab architecture used to test 2D semiconductors artificially boosts performance metrics, making it harder to assess whether these materials can truly replace silicon. (Nanowerk News) Two-dimensional ...

EPC recently introduced the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial ...

For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...

Qorvo’s QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT, which operates from 30MHz to 1,200MHz. The integrated input matching network enables wideband gain and power performance ...